Product overview

Product number
RC65D600E
Existing quantity
2,500
manufacturer
RealChip(正芯半导体)
Product Category
氮化镓晶体管(GaN HEMT)
product description

Product Details

Rohs :
分类 :
氮化镓晶体管(GaN HEMT)
包装 :
编带
参数 :
沟道类型:1个N沟道,漏源击穿电压(Vds):650V,连续漏极电流(Id):4.8A,耗散功率(Pd):25W
封装 :
TO-252
标题 :
RC65D600E
近期约售 :
3

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