Product overview

Product number
TP65H070LDG
Existing quantity
60
manufacturer
Transphorm
Product Category
氮化镓晶体管(GaN HEMT)
product description

Product Details

Rohs :
分类 :
氮化镓晶体管(GaN HEMT)
包装 :
管装
参数 :
沟道类型:1个N沟道,漏源击穿电压(Vds):650V,连续漏极电流(Id):25A,耗散功率(Pd):96W
封装 :
PQFN-3(8x8)
标题 :
TP65H070LDG
近期约售 :
0

Purchases and prices

Online service
Hotline
0512-57509905