Product overview

Product number
HYG025N04NA1C2
Existing quantity
5,000
manufacturer
HUAYI(华羿微)
Product Category
场效应管(MOSFET)
product description

Product Details

Rohs :
分类 :
场效应管(MOSFET)
包装 :
编带
参数 :
漏源电压(Vdss):40V,连续漏极电流(Id):190A,导通电阻(RDS(on)):1.4mΩ@10V,60A,耗散功率(Pd):130W
封装 :
DFN-8(5.2x5.9)
标题 :
单N沟道,电流:190A,耐压:40V
近期约售 :
4
Online service
Hotline
0512-57509905