Current - Continuous Drain (Id) @ 25°C :

4.6A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

535pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Part Status :

Active

Power Dissipation (Max) :

960mW (Ta)

Rds On (Max) @ Id, Vgs :

31mOhm @ 4.6A, 10V

Supplier Device Package :

SuperSOT™-6

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA