Product overview

Product number
HIGLR60R260D1
Existing quantity
5,000
manufacturer
HXY MOSFET(华轩阳电子)
Product Category
氮化镓晶体管(GaN HEMT)
product description

Product Details

Rohs :
ROHS
分类 :
氮化镓晶体管(GaN HEMT)
包装 :
编带
参数 :
沟道类型:1个N沟道,漏源击穿电压(Vds):650V,导通电阻(RDS(on)):160mΩ@6V
封装 :
DFN-8(5x6)
标题 :
HIGLR60R260D1
近期约售 :
5

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