Product overview

Product number
MDS1100
Existing quantity
0
manufacturer
Microsemi Corporation
Product Category
Transistors - Bipolar (BJT) - RF
product description
RF TRANS NPN 65V 1.03GHZ 55TU-1

Product Details

Current - Collector (Ic) (Max) :
100A
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 5A, 5V
Frequency - Transition :
1.03GHz
Gain :
8.9dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
-
Operating Temperature :
200°C (TJ)
Package / Case :
55TU-1
Part Status :
Obsolete
Power - Max :
8750W
Supplier Device Package :
55TU-1
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
65V

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