Product overview

Product number
MS652S
Existing quantity
0
manufacturer
Microsemi Corporation
Product Category
Transistors - Bipolar (BJT) - RF
product description
RF TRANS NPN 16V 512MHZ M123

Product Details

Current - Collector (Ic) (Max) :
2A
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 200mA, 5V
Frequency - Transition :
450MHz ~ 512MHz
Gain :
10dB
Mounting Type :
Chassis Mount
Noise Figure (dB Typ @ f) :
-
Operating Temperature :
200°C (TJ)
Package / Case :
M123
Part Status :
Obsolete
Power - Max :
25W
Supplier Device Package :
M123
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
16V

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