Current - Continuous Drain (Id) @ 25°C :

444A (Tc)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

1127nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

-

Operating Temperature :

175°C (TJ)

Package / Case :

Module

Part Status :

Obsolete

Power - Max :

3000W

Rds On (Max) @ Id, Vgs :

4.3mOhm @ 400A, 20V

Supplier Device Package :

Module

Vgs(th) (Max) @ Id :

4V @ 105mA