Current - Continuous Drain (Id) @ 25°C :

36A (Tc)

Drain to Source Voltage (Vdss) :

200V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Part Status :

Active

Power Dissipation (Max) :

125W (Tc)

Rds On (Max) @ Id, Vgs :

32mOhm @ 36A, 10V

Supplier Device Package :

PG-TDSON-8-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 90µA