Product overview

Product number
IPB009N03LGATMA1
Existing quantity
700
manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 30V 180A TO263-7

Product Details

Current - Continuous Drain (Id) @ 25°C :
180A (Tc)
Drain to Source Voltage (Vdss) :
30V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
227nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
25000pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-263-7, D²Pak (6 Leads + Tab)
Part Status :
Not For New Designs
Power Dissipation (Max) :
250W (Tc)
Rds On (Max) @ Id, Vgs :
0.95mOhm @ 100A, 10V
Supplier Device Package :
PG-TO263-7-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.2V @ 250µA

Purchases and prices

Online service
Hotline
0512-57509905