Product overview

Product number
NTD60N02R-1G
Existing quantity
334,998
manufacturer
Rochester Electronics, LLC
Product Category
Transistors - FETs, MOSFETs - Single
product description
N-CHANNEL POWER MOSFET

Product Details

Current - Continuous Drain (Id) @ 25°C :
8.5A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss) :
25V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1.33pF @ 20V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Part Status :
Obsolete
Power Dissipation (Max) :
1.25W (Ta), 58W (Tc)
Rds On (Max) @ Id, Vgs :
10.5mOhm @ 20A, 10V
Supplier Device Package :
I-PAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2V @ 250µA

Purchases and prices

Online service
Hotline
0512-57509905