Product overview

Product number
SPP100N03S2-03
Existing quantity
400
manufacturer
Rochester Electronics, LLC
Product Category
Transistors - FETs, MOSFETs - Single
product description
N-CHANNEL POWER MOSFET

Product Details

Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drain to Source Voltage (Vdss) :
30V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
7.02pF @ 25V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-220-3
Part Status :
Obsolete
Power Dissipation (Max) :
300W (Tc)
Rds On (Max) @ Id, Vgs :
3.3mOhm @ 80A, 10V
Supplier Device Package :
PG-TO220-3-1
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Online service
Hotline
0512-57509905