Product overview

Product number
2SK2009TE85LF
Existing quantity
2,825
manufacturer
Toshiba Semiconductor and Storage
Product Category
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 30V 0.2A SMINI

Product Details

Current - Continuous Drain (Id) @ 25°C :
200mA (Ta)
Drain to Source Voltage (Vdss) :
30V
Drive Voltage (Max Rds On, Min Rds On) :
2.5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
70pF @ 3V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Part Status :
Active
Power Dissipation (Max) :
200mW (Ta)
Rds On (Max) @ Id, Vgs :
2Ohm @ 50MA, 2.5V
Supplier Device Package :
SC-59-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
1.5V @ 100µA

Purchases and prices

Online service
Hotline
0512-57509905