Product overview

Product number
TK60P03M1,RQ(S
Existing quantity
0
manufacturer
Toshiba Semiconductor and Storage
Product Category
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 30V 60A DPAK-3

Product Details

Current - Continuous Drain (Id) @ 25°C :
60A (Ta)
Drain to Source Voltage (Vdss) :
30V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status :
Last Time Buy
Power Dissipation (Max) :
63W (Tc)
Rds On (Max) @ Id, Vgs :
6.4mOhm @ 30A, 10V
Supplier Device Package :
DPAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.3V @ 500µA

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