Current - Continuous Drain (Id) @ 25°C :

95A (Tc)

Drain to Source Voltage (Vdss) :

650V

Drive Voltage (Max Rds On, Min Rds On) :

18V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

162nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds :

3315pF @ 520V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Part Status :

Active

Power Dissipation (Max) :

360W (Tc)

Rds On (Max) @ Id, Vgs :

26mOhm @ 50A, 18V

Supplier Device Package :

H2PAK-7

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+22V, -10V

Vgs(th) (Max) @ Id :

5V @ 5mA