Product overview

Product number
RMD1N25ES9
Existing quantity
0
manufacturer
Rectron USA
Product Category
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CHANNEL 25V 1.1A SOT363

Product Details

Current - Continuous Drain (Id) @ 25°C :
1.1A (Ta)
Drain to Source Voltage (Vdss) :
25V
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
0.6pC @ 50V
Input Capacitance (Ciss) (Max) @ Vds :
30pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
6-TSSOP, SC-88, SOT-363
Part Status :
Active
Power Dissipation (Max) :
800mW (Ta)
Rds On (Max) @ Id, Vgs :
600mOhm @ 500mA, 4.5V
Supplier Device Package :
SOT-363
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±12V
Vgs(th) (Max) @ Id :
1.1V @ 250µA

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