Current - Continuous Drain (Id) @ 25°C :

5.2A (Tc)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 400V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Part Status :

Active

Power Dissipation (Max) :

31.3W (Tc)

Rds On (Max) @ Id, Vgs :

1Ohm @ 1A, 10V

Supplier Device Package :

Thin-PAK (5x6)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 50µA