Current - Continuous Drain (Id) @ 25°C :

18.6A (Tc)

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Part Status :

Obsolete

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

130mOhm @ 13.2A, 10V

Supplier Device Package :

PG-TO251-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA