Product overview

Product number
EPC2007
Existing quantity
0
manufacturer
EPC
Product Category
Transistors - FETs, MOSFETs - Single
product description
GANFET TRANS 100V 6A BUMPED DIE

Product Details

Current - Continuous Drain (Id) @ 25°C :
6A (Ta)
Drain to Source Voltage (Vdss) :
100V
Drive Voltage (Max Rds On, Min Rds On) :
5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
2.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
205pF @ 50V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 125°C (TJ)
Package / Case :
Die
Part Status :
Obsolete
Power Dissipation (Max) :
-
Rds On (Max) @ Id, Vgs :
30mOhm @ 6A, 5V
Supplier Device Package :
Die Outline (5-Solder Bar)
Technology :
GaNFET (Gallium Nitride)
Vgs (Max) :
+6V, -5V
Vgs(th) (Max) @ Id :
2.5V @ 1.2mA

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