Product overview

Product number
FQD4N20LTM
Existing quantity
0
manufacturer
ON Semiconductor
Product Category
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 200V 3.2A DPAK

Product Details

Current - Continuous Drain (Id) @ 25°C :
3.2A (Tc)
Drain to Source Voltage (Vdss) :
200V
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
5.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
310pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status :
Obsolete
Power Dissipation (Max) :
2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs :
1.35Ohm @ 1.6A, 10V
Supplier Device Package :
D-Pak
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2V @ 250µA

Purchases and prices

Online service
Hotline
0512-57509905