Product overview

Product number
RJL6013DPE-00#J3
Existing quantity
0
manufacturer
Renesas Electronics America Inc
Product Category
Transistors - FETs, MOSFETs - Single
product description
MOSFET N-CH 600V 11A LDPAK

Product Details

Current - Continuous Drain (Id) @ 25°C :
11A (Ta)
Drain to Source Voltage (Vdss) :
600V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SC-83
Part Status :
Active
Power Dissipation (Max) :
100W (Tc)
Rds On (Max) @ Id, Vgs :
810mOhm @ 5.5A, 10V
Supplier Device Package :
4-LDPAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
-
Online service
Hotline
0512-57509905