Product overview

Product number
BSC100N03LSGATMA1
Existing quantity
0
manufacturer
Rochester Electronics, LLC
Product Category
Transistors - FETs, MOSFETs - Single
product description
N-CHANNEL POWER MOSFET

Product Details

Current - Continuous Drain (Id) @ 25°C :
13A (Ta), 44A (Tc)
Drain to Source Voltage (Vdss) :
30V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1500pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerTDFN
Part Status :
Obsolete
Power Dissipation (Max) :
2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs :
10mOhm @ 30A, 10V
Supplier Device Package :
PG-TDSON-8-1
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.2V @ 250µA

Purchases and prices

Online service
Hotline
0512-57509905