产品概览

产品型号
MT3S111TU,LF
现有数量
1,439
制造商
Toshiba Semiconductor and Storage
产品类别
晶体管 - 双极(BJT)- 射频
产品描述
RF SIGE NPN BIPOLAR TRANSISTOR N

产品详情

Current - Collector (Ic) (Max) :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA, 5V
Frequency - Transition :
10GHz
Gain :
12.5dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Operating Temperature :
150°C (TJ)
Package / Case :
3-SMD, Flat Lead
Part Status :
Active
Power - Max :
800mW
Supplier Device Package :
UFM
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
6V
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