产品概览

产品型号
NSVB123JPDXV6T1G
现有数量
0
制造商
ON Semiconductor
产品类别
晶体管 - 双极(BJT)- 阵列 - 预偏置
产品描述
TRANS PREBIAS NPN/PNP SOT563

产品详情

Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 5mA, 10V
Frequency - Transition :
-
Mounting Type :
Surface Mount
Package / Case :
SOT-563, SOT-666
Part Status :
Obsolete
Power - Max :
500mW
Resistor - Base (R1) :
2.2kOhms
Resistor - Emitter Base (R2) :
4.7kOhms
Supplier Device Package :
SOT-563
Transistor Type :
1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max) :
50V
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