产品概览

产品型号
PMDPB28UN,115
现有数量
0
制造商
NXP USA Inc.
产品类别
晶体管 - FET,MOSFET - 阵列
产品描述
MOSFET 2N-CH 20V 4.6A HUSON6

产品详情

Current - Continuous Drain (Id) @ 25°C :
4.6A
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
265pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
6-UDFN Exposed Pad
Part Status :
Obsolete
Power - Max :
510mW
Rds On (Max) @ Id, Vgs :
37mOhm @ 4.6A, 4.5V
Supplier Device Package :
DFN2020-6
Vgs(th) (Max) @ Id :
1V @ 250µA
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热线电话
0512-57509905/9906 ; 15921863525