产品概览

产品型号
PMWD19UN,518
现有数量
0
制造商
NXP USA Inc.
产品类别
晶体管 - FET,MOSFET - 阵列
产品描述
MOSFET 2N-CH 30V 5.6A 8TSSOP

产品详情

Current - Continuous Drain (Id) @ 25°C :
5.6A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
1478pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-TSSOP (0.173"", 4.40mm Width)
Part Status :
Obsolete
Power - Max :
2.3W
Rds On (Max) @ Id, Vgs :
23mOhm @ 3.5A, 4.5V
Supplier Device Package :
8-TSSOP
Vgs(th) (Max) @ Id :
700mV @ 1mA
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