Current - Continuous Drain (Id) @ 25°C :

2.34A (Ta)

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 24V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154"", 3.90mm Width)

Part Status :

Obsolete

Power Dissipation (Max) :

730mW (Ta)

Rds On (Max) @ Id, Vgs :

85mOhm @ 3.05A, 10V

Supplier Device Package :

8-SOIC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA