产品概览

产品型号
IPP60R022S7XKSA1
现有数量
1,509
制造商
Infineon Technologies
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
MOSFET N-CH 600V

产品详情

Current - Continuous Drain (Id) @ 25°C :
23A (Tc)
Drain to Source Voltage (Vdss) :
600V
Drive Voltage (Max Rds On, Min Rds On) :
12V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 12V
Input Capacitance (Ciss) (Max) @ Vds :
5639pF @ 300V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-220-3
Part Status :
Active
Power Dissipation (Max) :
390W (Tc)
Rds On (Max) @ Id, Vgs :
22mOhm @ 23A, 12V
Supplier Device Package :
PG-TO220-3-1
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 1.44mA

采购与价格

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热线电话
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