产品概览

产品型号
5HN01M-TL-E
现有数量
15,000
制造商
Rochester Electronics, LLC
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
N-CHANNEL SILICON MOSFET

产品详情

Current - Continuous Drain (Id) @ 25°C :
100mA (Ta)
Drain to Source Voltage (Vdss) :
50V
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
6.2pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SC-70, SOT-323
Part Status :
Obsolete
Power Dissipation (Max) :
150mW (Ta)
Rds On (Max) @ Id, Vgs :
7.5Ohm @ 50mA, 10V
Supplier Device Package :
3-MCP
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
-

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