Current - Continuous Drain (Id) @ 25°C :

7.9A (Tc)

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1.02pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SOIC (0.154"", 3.90mm Width)

Part Status :

Obsolete

Power Dissipation (Max) :

5W (Tc)

Rds On (Max) @ Id, Vgs :

50mOhm @ 2.8A, 4.5V

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

950mV @ 250µA