产品概览
产品详情
- Current - Continuous Drain (Id) @ 25°C :
- -
- Drain to Source Voltage (Vdss) :
- 55V
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 4.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 290pF @ 28V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 225°C (TJ)
- Package / Case :
- 8-CDIP Exposed Pad
- Part Status :
- Active
- Power Dissipation (Max) :
- 50W (Tj)
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 100mA, 5V
- Supplier Device Package :
- 8-CDIP-EP
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- 10V
- Vgs(th) (Max) @ Id :
- 2.4V @ 100µA