产品概览

产品型号
HTNFET-D
现有数量
0
制造商
Honeywell Aerospace
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
MOSFET N-CH 55V 8CDIP

产品详情

Current - Continuous Drain (Id) @ 25°C :
-
Drain to Source Voltage (Vdss) :
55V
Drive Voltage (Max Rds On, Min Rds On) :
5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
4.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 28V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 225°C (TJ)
Package / Case :
8-CDIP Exposed Pad
Part Status :
Active
Power Dissipation (Max) :
50W (Tj)
Rds On (Max) @ Id, Vgs :
400mOhm @ 100mA, 5V
Supplier Device Package :
8-CDIP-EP
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
10V
Vgs(th) (Max) @ Id :
2.4V @ 100µA

采购与价格

您可能在找

推荐产品

在线客服
热线电话
0512-57509905/9906 ; 15921863525