产品概览

产品型号
BSB012N03LX3 G
现有数量
0
制造商
Infineon Technologies
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
MOSFET N-CH 30V 180A 2WDSON

产品详情

Current - Continuous Drain (Id) @ 25°C :
39A (Ta), 180A (Tc)
Drain to Source Voltage (Vdss) :
30V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
169nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
16900pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
3-WDSON
Part Status :
Obsolete
Power Dissipation (Max) :
2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs :
1.2mOhm @ 30A, 10V
Supplier Device Package :
MG-WDSON-2, CanPAK M™
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.2V @ 250µA
在线客服
热线电话
0512-57509905/9906 ; 15921863525