产品概览

产品型号
IKW03N120H2FKSA1
现有数量
3,415
制造商
Rochester Electronics, LLC
产品类别
晶体管 - UGBT、MOSFET - 单
产品描述
DISCRETE IGBT WITH DIODE

产品详情

Current - Collector (Ic) (Max) :
9.6A
Current - Collector Pulsed (Icm) :
9.9A
Gate Charge :
22nC
IGBT Type :
-
Input Type :
Standard
Mounting Type :
Through Hole
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
TO-247-3
Part Status :
Obsolete
Power - Max :
62.5W
Reverse Recovery Time (trr) :
42ns
Supplier Device Package :
PG-TO247-3
Switching Energy :
290µJ
Td (on/off) @ 25°C :
9.2ns/281ns
Test Condition :
800V, 3A, 82Ohm, 15V
Vce(on) (Max) @ Vge, Ic :
2.8V @ 15V, 3A
Voltage - Collector Emitter Breakdown (Max) :
1.2V
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0512-57509905/9906 ; 15921863525