产品概览

产品型号
RJK2006DPE-00#J3
现有数量
0
制造商
Renesas Electronics America Inc
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
MOSFET N-CH 200V 40A LDPAK

产品详情

Current - Continuous Drain (Id) @ 25°C :
40A (Ta)
Drain to Source Voltage (Vdss) :
200V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SC-83
Part Status :
Active
Power Dissipation (Max) :
100W (Tc)
Rds On (Max) @ Id, Vgs :
59mOhm @ 20A, 10V
Supplier Device Package :
4-LDPAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
-
在线客服
热线电话
0512-57509905/9906 ; 15921863525