产品概览

产品型号
DMT10H009LH3
现有数量
0
制造商
Diodes Incorporated
产品类别
晶体管 - FET,MOSFET - 单个
产品描述
MOSFET BVDSS: 61V-100V TO251

产品详情

Current - Continuous Drain (Id) @ 25°C :
84A (Tc)
Drain to Source Voltage (Vdss) :
100V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
20.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
2309pF @ 50V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-251-3 Stub Leads, IPak
Part Status :
Active
Power Dissipation (Max) :
96W (Tc)
Rds On (Max) @ Id, Vgs :
9mOhm @ 20A, 10V
Supplier Device Package :
TO-251
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 250µA

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