Product overview
- Product number
- MT3S111TU,LF
- Existing quantity
- 1,439
- manufacturer
- Toshiba Semiconductor and Storage
- Product Category
- Transistors - Bipolar (BJT) - RF
- product description
- RF SIGE NPN BIPOLAR TRANSISTOR N
Product Details
- Current - Collector (Ic) (Max) :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 30mA, 5V
- Frequency - Transition :
- 10GHz
- Gain :
- 12.5dB
- Mounting Type :
- Surface Mount
- Noise Figure (dB Typ @ f) :
- 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 3-SMD, Flat Lead
- Part Status :
- Active
- Power - Max :
- 800mW
- Supplier Device Package :
- UFM
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 6V
Purchases and prices
You may be looking for
- MT3S111(TE85L,F)
- MT3S111P(TE12L,F)
- MT3S111TU,LF $4.3256
- MT3S111TU,LF(T
- MT3S113(TE85L,F) $5.2206
Recommended Products
- MT3S111(TE85L,F)
- MT3S111P(TE12L,F)
- MT3S111TU,LF $4.3256
- MT3S111TU,LF(T
- MT3S113(TE85L,F) $5.2206







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