Product overview

Product number
MT3S111TU,LF
Existing quantity
1,439
manufacturer
Toshiba Semiconductor and Storage
Product Category
Transistors - Bipolar (BJT) - RF
product description
RF SIGE NPN BIPOLAR TRANSISTOR N

Product Details

Current - Collector (Ic) (Max) :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA, 5V
Frequency - Transition :
10GHz
Gain :
12.5dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Operating Temperature :
150°C (TJ)
Package / Case :
3-SMD, Flat Lead
Part Status :
Active
Power - Max :
800mW
Supplier Device Package :
UFM
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
6V

Purchases and prices

Online service
Hotline
0512-57509905