Product overview

Product number
MT3S113(TE85L,F)
Existing quantity
5,915
manufacturer
Toshiba Semiconductor and Storage
Product Category
Transistors - Bipolar (BJT) - RF
product description
RF TRANS NPN 5.3V 12.5GHZ SMINI

Product Details

Current - Collector (Ic) (Max) :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA, 5V
Frequency - Transition :
12.5GHz
Gain :
11.8dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
1.45dB @ 1GHz
Operating Temperature :
150°C (TJ)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Part Status :
Active
Power - Max :
800mW
Supplier Device Package :
S-Mini
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
5.3V

Purchases and prices

Online service
Hotline
0512-57509905