Product overview
- Product number
- HYG110P04LQ2D
- Existing quantity
- 2,500
- manufacturer
- HUAYI(华羿微)
- Product Category
- 场效应管(MOSFET)
- product description
Product Details
- Rohs :
- 分类 :
- 场效应管(MOSFET)
- 包装 :
- 编带
- 参数 :
- 漏源电压(Vdss):40V,连续漏极电流(Id):50A,导通电阻(RDS(on)):9.4mΩ@10V,20A,耗散功率(Pd):57.7W
- 封装 :
- TO-252-2
- 标题 :
- P沟道增强型MOSFET,电流:-50A,耐压:-40V
- 近期约售 :
- 1
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